Method of radiographic inspection of wooden members

The invention is a method to be used for radiographic inspection of a wooden specimen for internal defects which includes the steps of introducing a radiopaque penetrant into any internal defects in the specimen through surface openings; passing a beam of radiation through a portion of the specimen to be inspected; and making a radiographic film image of the radiation passing through the specimen, with the radiopaque penetrant in the specimen absorbing the radiation passing through it, thereby enhancing the resulting image of the internal defects in the specimen

Simulation of radiation-induced defects

Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle physics accelerator at CERN, Geneva. The foreseen upgrade of the LHC to its high luminosity (HL) phase (HL-LHC scheduled for 2023), will enable the use of maximal physics potential of the facility. After 10 years of operation the expected fluence will expose the tracking systems at HL-LHC to a radiation environment that is beyond the capacity of the present system design. Thus, for the required upgrade of the all-silicon central trackers extensive measurements and simulation studies for silicon sensors of different designs and materials with sufficient radiation tolerance have been initiated within the RD50 Collaboration. Supplementing measurements, simulations are in vital role for e.g. device structure optimization or predicting the electric fields and trapping in the silicon sensors. The main objective of the device simulations in the RD50 Collaboration is to develop an approach to model and predict the performance of the irradiated silicon detectors using professional software. The first successfully developed quantitative models for radiation damage, based on two effective midgap levels, are able to reproduce the experimentally observed detector characteristics like leakage current, full depletion voltage and charge collection efficiency (CCE). Recent implementations of additional traps at the SiO$_2$/Si interface or close to it have expanded the scope of the experimentally agreeing simulations to such surface properties as the interstrip resistance and capacitance, and the position dependency of CCE for strip sensors irradiated up to $\sim$$1.5\times10^{15}$ n$_{\textrm{eq}}\textrm{cm}^{-2}$.Comment: 13 pages, 11 figures, 6 tables, 24th International Workshop on Vertex Detectors, 1-5 June 2015, Santa Fe, New Mexico, US

Quantifying structural damage from self-irradiation in a plutonium superconductor

The 18.5 K superconductor PuCoGa5 has many unusual properties, including those due to damage induced by self-irradiation. The superconducting transition temperature decreases sharply with time, suggesting a radiation-induced Frenkel defect concentration much larger than predicted by current radiation damage theories. Extended x-ray absorption fine-structure measurements demonstrate that while the local crystal structure in fresh material is well ordered, aged material is disordered much more strongly than expected from simple defects, consistent with strong disorder throughout the damage cascade region. These data highlight the potential impact of local lattice distortions relative to defects on the properties of irradiated materials and underscore the need for more atomic-resolution structural comparisons between radiation damage experiments and theory.Comment: 7 pages, 5 figures, to be published in PR

Are topological defects responsible for the 300 EeV cosmic rays?

We use of a hybrid matrix--Monte Carlo method to simulate the cascade through the cosmic background radiation initiated by UHE particles and radiation emitted by topological defects. We follow the cascade over cosmological distances and calculate the intensities of hadrons, gamma-rays and neutrinos produced. We compare our results with the observed cosmic ray intensity at 300 EeV and lower energies, and conclude that topological defects are most unlikely to be the origin of the most energetic cosmic ray events.Comment: 3 pages, compressed and uuencoded PostScript (111kb); Nucl. Phys. B., Proc. Suppl., vol 48, in press (TAUP95 Workshop

Effect of radiation-induced emission of Schottky defects on the formation of colloids in alkali halides

Formation of vacancy clusters in irradiated crystals is considered taking into account radiation-induced Schottky defect emission (RSDE) from extended defects. RSDE acts in the opposite direction compared with Frenkel pair production, and it results in the radiation-induced recovery processes. In the case of alkali halides, Schottky defects can be produced as a result of the interaction of extended defects with excitons, as has been suggested previously. We consider a model that takes into account excitonic mechanisms for the creation of both Frenkel and Schottky defects, and which shows that although the contribution of the latter mechanism to the production of primary defects may be small, its role in the radiation-induced evolution of microstructure can be very significant. The model is applied to describe the evolution of sodium colloids and the formation of voids in NaCl, which is followed by a sudden fracture of the material, presenting a potential problem in rock salt-based nuclear waste repositories. The temperature, dose rate and dose dependence of colloid growth in NaCl doped with different types of impurities is analyzed. We have found that colloid growth may become negative below a threshold temperature (or above a threshold dose rate), or below a certain impurity concentration, which is determined by the RSDE, that depends strongly on the type and concentration of the impurities. The results obtained with the model are compared with experimental observations.

Laser scanner for testing semiconductor chips

Individual ''fingerprint'' signals are produced when system photoexcites chips. ''Fingerprints'' are analyzed for characteristics associated with defects, including many not visible to the naked eye. Electromagnetic radiation photogenerates free electrons and holes in semiconductor chip. These carriers produce electrical signals at terminals. Signals vary depending on what defects are present